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In Chap 19, you learned that a diode will not conduct until the forward-bias voltage is at least as great as the forward breakover voltage There s a corollary to this: a diode will always conduct when the forward-bias voltage reaches or exceeds the forward breakover voltage, when the device is conducting current in the forward direction In the case of silicon diodes this is approximately 06 V For germanium diodes it is about 03 V, and for selenium diodes it is about 1 V This phenomenon can be used to advantage when it is necessary to limit the amplitude of a signal, as shown in Fig 20-8 By connecting two identical diodes back-to-back in parallel with the signal path (A), the maximum peak amplitude is limited, or clipped, to the forward breakover voltage of the diodes The input and output waveforms of a clipped signal are illustrated at B This scheme is sometimes used in radio receivers to prevent blasting when a strong signal comes in The downside of the diode limiter circuit, such as the one shown in Fig 20-8, is the fact that it introduces distortion when clipping occurs This might not be a problem for reception of digital signals, for frequency-modulated signals, or for analog signals that rarely reach the limiting voltage But for amplitude-modulated signals with peaks that rise past the limiting voltage, it can cause trouble

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two diodes to act as an ac limiter At B, illustration of sinewave peaks cut off by the action of the diodes in an ac limiter

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When a diode is reverse-biased, there is a region at the P-N junction with dielectric (insulating) properties As you know from Chap 19, this is called the depletion region, because it has a shortage of majority charge carriers The width of this zone depends on several things, including the reverse-bias voltage As long as the reverse bias is less than the avalanche voltage, varying the bias affects the width of the depletion region This in turn varies the junction capacitance This capacitance, which is always small (on the order of picofarads), varies inversely with the square root of the reverse-bias voltage, as long as the reverse bias remains less than the avalanche voltage Thus, for example, if the reverse-bias voltage is quadrupled, the junction capacitance drops to one-half; if the reverse-bias voltage is decreased by a factor of 9, then the junction capacitance increases by a factor of 3 Some diodes are manufactured especially for use as variable capacitors Such a device is known as varactor diode, as you learned in Chap 19 Varactors are used in a special type of circuit called a voltage-controlled oscillator (VCO) Figure 20-9 is a simple example of the LC circuit in a VCO, using a coil, a fixed capacitor, and a varactor This is a parallel-tuned circuit The fixed capacitor, whose value is large compared with that of the varactor, serves to keep the coil from short-circuiting the control voltage across the varactor Notice that the symbol for the varactor has two lines on the cathode side

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Under certain conditions, diodes can be made to produce microwave RF signals Three types of diodes that can do this are Gunn diodes, IMPATT diodes, and tunnel diodes

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Gunn Diodes A Gunn diode can produce up to 1 W of RF power output, but more commonly it works at levels of about 01 W Gunn diodes are usually made from gallium arsenide A Gunn diode oscillates because of the Gunn effect, named after J Gunn of International Business Machines (IBM), who first observed it in the 1960s A Gunn diode doesn t work like a rectifier, detector, or mixer Instead, the oscillation takes place as a result of a quirk called negative resistance

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